Conductivity of the film increased up to 3 mol % Mn doping and then decreased. Photoluminescence (PL) spectra of the films exhibited emission peaks in visible region of the electromagnetic spectra. Band gap of the films decreased from 4.78 to 4.41 eV with increase in Mn concentration. An average transmittance >80% (UV-Vis region) was observed for all the films. Antiferromagnetic interactions were observed for 5 mol % Mn doping. Table 1 summarizes the major peak position (2), the d-spacing that represents interplanar distance, miller indices, and FWHM of the three samples. Vibrating sample magnetometer (VSM) measurements reveal the presence of magnetic properties in Mn doped nanocomposite thin films. The obtained XRD pattern corresponds to the tetragonal (rutile) phase of the SnO 2 crystal structure as confirmed by the JCPDS data 41-1445 and 88-0287 14, 19. X-ray photo electron spectroscopy (XPS) confirmed the presence of Zr 4þ, Sn 4þ and Mn 2þ ion in ZrO 2 eSnO 2 : Mn films. XRD patterns of samples were obtained with an XRD (Rigaku D-max/3C) using Cu K radiation (45 kV, 30 mA). Scanning electron microscopy (SEM) showed the formation of grain growth with an increase in Mn concentration. SEM was carried out on a Hitachi S-570 model instrument. Decrease in crystallinity with increase of Mn concentration was observed for the films. X-ray diffraction pattern (XRD) of films showed the formation of tetragonal phase of SnO 2 and orthorhombic ZrSnO 4. The structural, morphological, magnetic, optical and electrical properties of the films were studied for undoped and different (15 mol %) manganese doping concentrations. Manganese doped ZrO 2 eSnO 2 (ZrO 2 eSnO 2 : Mn) nanocomposite thin films were prepared using sol e gel dip coating technique.
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